Facilities - Nanofabrication


  Dr. Jiong Hua, Nanofabrication Specialist

Prof. Ned Ianno, Faculty Supervisor
Dr. Jiong Hua, Specialist

855 N. 16th Street,
102B Nanoscience Research Center
University of Nebraska
Lincoln, NE 68588-0298

phone: (402) 472-3773
fax number: 402 472-6148
e-mail: jhua2@unl.edu
Nanofab Website: http://ncmn.unl.edu/nanofab/


The goal of the Nanofabrication Facility at NCMN is to provide researchers with effective and efficient access to state-of-the-art nanofabrication equipment, expertise and training. Facility capabilities include high resolution patterning by electron-beam lithography (EBL) and photolithography, focused ion beams (FIB) milling, reactive ion etching (RIE) process. We welcome researchers from any discipline who wish to explore uses of micro- and nano- fabrication technologies in their work.


FEI Strata 200xp Focused-Ion Beam Workstation

  FEI Strata 200xp Focused-Ion Beam Workstation

1. Accelerating energy range: 5 - 30 keV
2. Beam current range: 1 pA - 11.5 nA
3. Resolution: 8 nm
4. Less than 20 nm minimum resolution in milling and patterning
5. Two complimentary gas injection systems for Pt deposition and selective carbon milling

Featuring FEI's 30 kV focused Ga+ ion column, this focused ion beam (FIB) system provides a versatile tool for performing work at the nanoscale. The most powerful capability of FIB is precisely controlled milling, which allows the freedom to manipulate the sample such as open it up in the third dimension to create a cross-section, remove material from selected region or create any possible shape in various substrates and materials as "carved in stone". Two complimentary gas injection systems (GIS) are equipped for enhanced etching of carbon containing materials such as polymers or for deposition of conductive and protective Pt layer. It is a superb general purpose tool for SEM imaging, high aspect ratio probe milling, grain structure analysis, circuit modification and failure analysis, defect characterization, fabrication of nano-patterns, and other related applications.


SUSS MicroTec MJB4 Mask Aligner

1. High resolution printing down to 0.8µm
2. Overlay accuracy to 1 µm
3. Fast and accurate alignment with SUSS Single-field Microscope
4. Backside infrared alignment
5. Substrate size up to 100mm

SUSS MicroTec MJB4 Mask Aligner

The MJB4 mask aligner is an easy to use instrument for high-resolution photolithography. It is equipped with 400 nm exposure optics and lamps that allow a sub-micro exposure in vacuum contact. The achievable adjustment accuracy X, Y and ? is below 1 µm. The versatile mask holder allows both round and square plates as masks, and the sample plate accommodates small and odd-shaped substrates. Masks and wafer/substrates to a total thickness of 9.00 mm can be processed. The system also features an infrared system for backside or buried layer alignment.


Electron Beam Lithography (EBL) System

  FEI Strata 200xp Focused-Ion Beam Workstation
1. Energy of electrons: 0.1 - 30 keV
2. Beam size (resolution) ? 2.5 nm (? 1.6 nm)
3. Minimum pattern feature size ? 20 nm
4. Field stitching ? 50 nm (mean+2?)
5. Laserstage travel range 50×50×25 mm (maximum wafer size)



A Zeiss Supra 40 field-emission scanning electron microscope is integrated with an electron beam blanker, laser interferometer-controlled wafer stage, and a Raith pattern generator to form a complete EBL system. The Zeiss Supra 40 features electron beam up to 30KeV and allows imaging of sample surfaces with very high resolution. This electron lithography system provides capability of reproducibly achieving feature sizes below 20nm. Additionally, stitching application and multilayer EBL with better than 50nm overlay accuracy on a wide variety of substrates is achievable by use of the laser interferometer controlled stage.


Trion Minilock-Phantom III Reactive Ion Etching (RIE) System

1. Max RF power: 600 W
2. Gas Channels: 7 Maximum
3. Max wafer size: 12 inch (300 mm)

Trion Minilock-Phantom III Reactive Ion Etching (RIE) System


The Trion Minilock Phantom III RIE system is a plasma etch system with state-of-art plasma etch capability using single wafers, dies or parts. Accommodating up to seven process gases (CF4, O2, Ar, He, CL2, BCI3, HBr), this system can be used for anisotropic dry etching of films such as silicon oxide, silicon nitride, polysilicon, aluminum, GaAs and many others. This reactor can also be used to strip photoresist and other organic materials. The system is equipped with a load lock that increases user safety by preventing contact with the process chamber and any residual etch by-products. The load lock also allows the chamber to remain permanently under vacuum thereby keeping out moisture and keeping the reaction chamber free of possible corrosion.