Focused-Ion Beam Workstation
FEI Strata 200xp focused ion beam (FIB) system provides strong capability and tremendous flexibility of nano-fabrication to majority of materials. The Ga⁺ ion beam scans through a desired location and mills a very small area around the region of interest. It is also a precise instrument that can be applied to the fabrication of microelectronic and optoelectronic devices, such as direct-write lithography, circuit modification, failure analysis, defect characterization, and ion beam assisted etching and micromachining.
This system is an advanced tool for rapid, precise micromachining and deposition of submicron features in various substrates and materials. It is also a superb general purpose tool for SEM imaging, grain structure analysis, high aspect ratio probe milling, fabrication of nano-patterns, and other related applications. Two gas injection systems (GIS) are equipped. Pt GIS is used for deposition of conductive and protective platinum layer; selective carbon mill GIS is for enhanced etch of C-containing samples such as polymers and other resistive materials. Other functions include an in-situ optical microscope, real time milling monitor, and auto FIB programmable milling.

• Accelerating energy range between 5 - 30 keV
• Beam current range from 1 pA - 11.5 nA for 10 apertures
• Beam diameter is 8 - 500 nm
• Less than 20 nm minimum resolution in milling and patterning

Electron Beam Lithography System
This lithography instrument integrated with the Zeiss field-emission electron microscope to form a complete electron beam lithography system. A new Zeiss Supra 40 FESEM allows imaging of sample surfaces with very high resolution. Ultimate resolution is below 1.2 nm at high energies and a few nm at sub keV energies for ultimate analytical work on nano-particles and polymer materials prone to electron beam damage.

• Energy of electrons: 200 V - 30 kV
• Resolution to 1.3nm @ 15kV; 2.1 nm @1kV
• Working distance: 2 - 30 mm

Reactive-Ion Etching System
A recently acquired RIE system is a plasma etch system with state-of-art plasma etch capability using single wafers, dies or parts. The RIE system has up to seven process gases (CF₄, O₂, Ar, He, CL₂, BCI₃, HBr) which are used to etch films such as silicon oxide, silicon nitride, polysilicon, aluminum, GaAs and many others. This reactor can also be used to strip photoresist and other organic materials.
Samples are loaded into the process chamber via the vacuum load lock. This feature increases user safety by preventing contact with the process chamber and any residual etch by-products. The load lock also allows the chamber to remain permanently under vacuum thereby keeping out moisture and keeping the reaction chamber free of possible corrosion.