Dr. Timothy J. ReeceNCMN Homepage Link

Dr. Timothy J. Reece, Assistant Professor
Physics and Physical Science - UNK
University of Nebraska–Kearney
218 Bruner Hall, 905 W. 25th St.
Kearney, Nebraska 66849-1150
office: (308) 865-8280
email: reecetj@unk.edu 
Reece’s web page

Current Research

Publications

1. “High-Resolution Studies of Domain Switching Behavior in Nanostructured Ferroelectric Polymers,” Pankaj Sharma, Timothy J. Reece, Stephen Ducharme and Alexei Gruverman, Nano Letters 11, 1970-75 (2011).

2. “Orientational Imaging in Polar Polymers by Piezoresponse Force Microscopy,” Pankaj Sharma, Dong Wu, Shashi Poddar, Timothy J. Reece, Stephen Ducharme and Alexei Gruverman, J. Applied Physics 110, 052010 (2011).

3.“Efficiency enhancement in organic solar cells with ferroelectric polymers,” Yongbo Yuan,Timothy J. Reece, Stephen Ducharme, Pankaj Sharma, Alexei Gruverman, Yang Yang, Jinsong Huang, Nature Materials 11 (3), 296-302 (2011).

4. “Ferroelectric field effect transistor using very thin ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett films as gate dielectrics,” A. Gerber, M. Fitsilis, R. Waser, T. J. Reece, E. Rije, S. Ducharme, H. Kohlstedt, J. Appl. Phys. 107, 124119 (2010).

5. “Investigation of State Retention in Metal-Ferroelectric-Insulator-Semiconductor Structures Based on Langmuir-Blodgett (LB) Copolymer Films,” T. J. Reece, A. Gerber, H. Kohlstedt, S. Ducharme, J. Applied Physics 108, 024109 (2010).

6. “Modeling of metal-ferroelectric-insulator-semiconductor structures based on Langmuir–Blodgett copolymer films,” T. J. Reece, S. Ducharme, J. Appl. Physics 106, 124505 (2009).

7. “Low-Voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film,” A. Gerber, M.Fitsilis, H. Kohlstedt, R. Waser, T. J. Reece, S. Ducharme, E. Rije, J. Applied Physics 100, 024110 (2006).

8. “Ferroelectric Polymer Langmuir-Blodgett Films for Non-Volatile Memory Applications,” S. Ducharme, T. J. Reece, C. M. Othon, R. K. Rannow, IEEE Transactions on Device and Material Reliability 5, 720-735 (2005).

9. “Nonvolatile Memory Element Based on a Ferroelectric Polymer Langmuir-Blodgett Film,” T. J. Reece, S. Ducharme, A. V. Sorokin, M. Poulsen, Applied Physics Letters, 142-44 (2003).