Faculty - Reece

Timothy J. Reece, Assistant Professor


Timothy Reece

Timothy J. Reece
Assistant Professor

Physics and Physical Science - UNK
University of Nebraska–Kearney
218 Bruner Hall, 905 W. 25th St.
Kearney, Nebraska 66849-1150
Office: 308-865-8280

Publications

  • “High-Resolution Studies of Domain Switching Behavior in Nanostructured Ferroelectric Polymers,” Pankaj Sharma, Timothy J. Reece, Stephen Ducharme and Alexei Gruverman, Nano Letters 11, 1970-75 (2011).
  • “Orientational Imaging in Polar Polymers by Piezoresponse Force Microscopy,” Pankaj Sharma, Dong Wu, Shashi Poddar, Timothy J. Reece, Stephen Ducharme and Alexei Gruverman, J. Applied Physics 110, 052010 (2011).
  • “Efficiency enhancement in organic solar cells with ferroelectric polymers,” Yongbo Yuan,Timothy J. Reece, Stephen Ducharme, Pankaj Sharma, Alexei Gruverman, Yang Yang, Jinsong Huang, Nature Materials 11 (3), 296-302 (2011).
  • “Ferroelectric field effect transistor using very thin ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett films as gate dielectrics,” A. Gerber, M. Fitsilis, R. Waser, T. J. Reece, E. Rije, S. Ducharme, H. Kohlstedt, J. Appl. Phys. 107, 124119 (2010).
  • “Investigation of State Retention in Metal-Ferroelectric-Insulator-Semiconductor Structures Based on Langmuir-Blodgett (LB) Copolymer Films,” T. J. Reece, A. Gerber, H. Kohlstedt, S. Ducharme, J. Applied Physics 108, 024109 (2010).
  • “Modeling of metal-ferroelectric-insulator-semiconductor structures based on Langmuir–Blodgett copolymer films,” T. J. Reece, S. Ducharme, J. Appl. Physics 106, 124505 (2009).
  • “Low-Voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film,” A. Gerber, M.Fitsilis, H. Kohlstedt, R. Waser, T. J. Reece, S. Ducharme, E. Rije, J. Applied Physics 100, 024110 (2006).
  • “Ferroelectric Polymer Langmuir-Blodgett Films for Non-Volatile Memory Applications,” S. Ducharme, T. J. Reece, C. M. Othon, R. K. Rannow, IEEE Transactions on Device and Material Reliability 5, 720-735 (2005).
  • “Nonvolatile Memory Element Based on a Ferroelectric Polymer Langmuir-Blodgett Film,” T. J. Reece, S. Ducharme, A. V. Sorokin, M. Poulsen, Applied Physics Letters, 142-44 (2003).