Faculty - Hong

Dr. Xia Hong

Dr. Xia Hong, Assistant Professor
Physics & Astronomy
University of Nebraska-Lincoln
310J Jorgensen Hall
Office: 402-472-2779
Hong's website
Google scholar page
Nanomaterials (UNL Office of Research Video)

Research Interests

Xia Hong’s research focuses on epitaxial growth and fabrication of novel nanostructures and low dimensional systems using advanced physical vapor deposition and semiconductor device fabrication techniques; creating and imaging their local phase structures using scanning probe approaches; and studying how their transport, electronic and magnetic properties evolve with system dimensions. The materials systems of interest include the epitaxial ferroelectric and correlated oxide thin films and heterostructures, and low dimensional electron systems such as graphene.

The research program is funded by NSF.


Z. Xiao, Shashi Poddar, Stephen Ducharme, X. Hong, “Domain wall roughness and creep in nanoscale crystalline ferroelectric polymer”, arXiv:1301.1377 (2013). [Link]

X. Hong*, K. Zou, A. M. DaSilva, C. H. Ahn, and J. Zhu, “Integrating Functional Oxides with Graphene (invited review)”,Solid State Commun. 152, 1365 (2012). [Link]

P. Paruch, A. B. Kolton, X. Hong, C. H. Ahn, and T. Giamarchi, “Thermal quench effects on ferroelectric domain walls”, Phys. Rev. B 85, 214115 (2012). [Link]

X. Hong, K. Zou, B. Wang, S.-H. Cheng, and J. Zhu, “Evidence for spin-flip scattering and local moments in dilute fluorinated graphene”, Phys. Rev. Lett. 108, 226602 (2012). [Link]

K. Zou, X. Hong, and J. Zhu, “Electron-electron interaction and electron-hole asymmetry in bilayer graphene”, Phys. Rev. B 84, 085408 (2011).

J. Hoffman, X. Hong, and C.H. Ahn, “Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications”, Nanotechnology 22, 254014 (2011).

X. Hong, S.-H. Cheng, C. Herding, and J. Zhu, "Colossal negative magnetoresistance in dilute fluorinated graphene", Phys. Rev. B 83, 085410 (2011).

K. Zou, X. Hong, D. Keefer, and J. Zhu, “Deposition of high-quality HfO2 on graphene and the effect of remote substrate phonon scattering”, Phys. Rev. Lett. 105, 126601 (2010).

X. Hong, J. Hoffman, A. Posadas, K. Zou, C.H. Ahn, and J. Zhu “Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3”, Appl. Phys. Lett. 97, 033114 (2010).

X. Hong, K. Zou, and J. Zhu, “Quantum scattering time and its implications on scattering sources in graphene”, Phys. Rev. B 80, 241415 (Rapid Communications) (2009).

N. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, and L. Klein, "Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La0.7Ca0.3MnO3", J. Appl. Phys. 106, 023916 (2009).

X. Hong, A. Posadas, K. Zou, C. H. Ahn, and J. Zhu, “High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides”, Phys. Rev. Lett. 102, 136808 (2009).

J.-B. Yau, X. Hong, A. Posadas, W. Gao, E. Altman, C. H. Ahn, Y. Bason, L. Klein, M. Sidorov, and Z. Krivokapic, “Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films”, J. Appl. Phys. 102, 103901 (2007).

Y. Bason, L. Klein, H. Q. Wang, J. Hoffman, X. Hong, V. E. Henrich, and C. H. Ahn, “Planar Hall effect in epitaxial thin films of magnetite”, J. Appl. Phys. 101, 09J507 (2007).

X. Hong, J.-B. Yau, J. D. Hoffman, C. H. Ahn, Y. Bason, and L. Klein, “The effect of electric field doping on the anisotropic magnetoresistance of doped manganites”, Phys. Rev. B 74, 174406 (2006).

Y. Bason, L. Klein, J.-B. Yau, X. Hong, J. D. Hoffman, and C. H. Ahn, “Planar Hall effect magnetic random access memory”, J. Appl. Phys. 99, 08R701 (2006).

T. C. Kaspar, T. Droubay, V. Shutthanandan, S. M. Heald, C. M. Wang, D. E. McCready, S. Thevuthasan, J. D. Bryan, D. R. Gamelin, A. J. Kellock, M. F. Toney, X. Hong, C. H. Ahn, and S. A. Chambers “Ferromagnetism and structure of epitaxial Cr-doped anatase TiO2 thin films”, Phys. Rev. B 73, 155327 (2006).

X. Hong, A. Posadas, and C. H. Ahn, “Examining the screening limit of field effect devices via the metal-insulator transition”, Appl. Phys. Lett. 86, 142501 (2005).

X. Hong, F. Xiao, J. W. Reiner, A. Posadas, and C. H. Ahn, “Growth and characterization of La0.8Sr0.2MnO3/Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 heterostructures for three-dimensional circuit studies”, Ann. Phys. 13, 15 (2004).

Y. Bason, L. Klein, J.-B. Yau, X. Hong, and C. H. Ahn, “Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films”, Appl. Phys. Lett. 84, 2593 (2004).

Y. Bason, L. Klein, J.-B. Yau, X. Hong, and C. H. Ahn, “Characterization of the magnetic anisotropy of La1-xSrxMnO3 using the planar Hall effect”, Phys. Stat. Sol. C 1, 3336, (2004).

X. Hong, A. Posadas, A. Lin, and C. H. Ahn, “Ferroelectric-field-induced tuning of magnetism in the colossal magnetoresistive oxide La1-xSrxMnO3”, Phys. Rev. B 68, 134415 (2003).

A. Lin, X. Hong, V. Wood, A. A. Verevkin, C. H. Ahn, R. A. McKee, F. J. Walker, and E. D. Specht, “Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties”, Appl. Phys. Lett. 78, 2034 (2001).