Current Research

   As a new faculty member of the Department of Orthopaedic Surgery and Rehabilitation, Professor Namavar’s work is mostly involved with the development of novel concepts and technologies to maximize the lifetime of orthopaedic implants and minimize the possibility of wear and revision surgery. These innovations include the development of novel nanostructure materials and diagnostic techniques for both in vitro and in vivo applications.
     To address these goals, on September 2003, a Nanotechnology Laboratory opened at the Medical Center. Presently an ion beam assisted deposition (IBAD) system and various testing facilities are operational. This system combines physical vapor deposition with concurrent ion beam bombardment in a high vacuum environment. Several specialized coatings are being developed for orthopaedic implants, biomedical use, and other scientific applications. Presently, the highlight of Dr Namavar’s research includes:
     · Application of nanotechnology in total joint arthroplasty for:
          a. Reducing the wear of orthopaedic implants
          b. Controlling the bone growth through material and surface design
     · Development of smart infection-resistant coatings for orthopaedics and dental implants
     · In vitro and in vivo absolute wear measurements of orthopaedic implants
     · Development of medical imaging technology by non-ionizing radiation

     Many of these works involve basic and fundamental research, such as studying the nature of nanostructured materials and determining the physical and chemical properties of their grain size, phases, porosity and composition.

     Dr. Namavar has authored or co-authored well over 150 scientific papers in reviewed journals and has been granted several U.S. patents. He has been awarded over 50 grants and contracts from NSF, DOE, NIH, NASA and DOD.

Recent Patents

Namavar, F. (2003). Nanocrystalline, homometallic, protective coatings for orthopedic prosthesis. U.S. Pat. Appl. Publ. 16 pp. CODEN: USXXCO US 2003229399 A1 20031211 CAN 140:19917 AN 2003:971784.

Soref, R. A., Namavar, F. (1999). Multilayer films with SiC and nitride heterostructures on SiC/SiO₂/Si substrates for optical and electronic devices. U.S. 14 pp. CODEN: USXXAM US 5880491 A 19990309 CAN 130:203784 AN 1999:175732 CAPLUS.

Kalkhoran, N. M., Namavar, F. (1998). Wavelength Selective Photodetector, U.S. Patent No. 5,726,440 issued Mar. 10, 1998.

Kalkhoran, N. M., Namavar, F. (1997). Multiband spectroscopic photodetector array. U.S. 23 pp. CODEN: USXXAM US 5671914 A 19970930 CAN 127:270293 AN 1997:640187.

Recent Publications

Namavar, F. Applications of nanotechnology for alternative bearing surfaces in orthopaedics. Proceedings of the 8th Ceramics, Cells and Tissues Meeting-Seminar, Faenza, Italy March, 2003. Volume Edited by A. Ravaglioli and A. Krajewski.. ISTEC-CNR (December 2003).

Aouadi, S.M., Namavar, F., Tobin, E., Finnegan, N., Haasch, R. T., Nilchiani, R. et. al. (2002). Characterization of CrBN films deposited by ion beam assisted deposition. J. Appl. Phys. 91(3), 1040-1045.

Noh, M., Jellison Jr., G. E., Namavar, F., Weitering, H. H. (2002) Isolation of a metallic Si(111)7x7 surface reconstruction via separation by implanted oxygen. Appl. Phys. Lett. 76(6), 733-735.

Hong, M. H., Chung, J., Namavar, F., Pirouz, P. (2000). Defect characterization in 3C-SiC films grown on thin and thick silicon top layers of SIMOX. Materials Science Forum 338-342 (Silicon Carbide and Related Materials Part 1), 525-528.

Hong, M. H., Chung, J., Namavar, F., Pirouz, P. (2000). Defect distribution in 3C-SiC grown on rigid versus compliant substrates. Acta Mater.

Vonsovici, A., Reed, G. T., Josey, M. R., Routley, P. R., Evans, A. G. R., Namavar, F. (1999). 3C(‚)-SiC-on-insulator waveguide structures for modulators and sensor systems. Proceedings of SPIE-The International Society for Optical Engineering 3896(Design, Fabrication, and Characterization of Photonic Devices), 352-359.

Namavar, F., Colter, P. C., Planes, N., Fraisse, B., Pernot, J., Juillaguet, S. et.al. (1999) Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition. Materials Science & Engineering, B: Solid-State Materials for Advanced Technology B61-62, 571-575.